APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 1 ? 6 sk dk g sd d s dk g sk absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdo wn voltage 1000 v t c = 25c 215 i d continuous drain current t c = 80c 160 i dm pulsed drain current 860 a v gs gate - source voltage 30 v r dson drain - source on resistance 52 m p d maximum power dissipation t c = 25c 5000 w i ar avalanche current (repetitive and non repetitive) 30 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3200 mj v dss = 1000v r dson = 45m ? typ @ tj = 25c i d = 215a @ tc = 25c application ? zero current switching resonant mode features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant single switch with series diode mosfet power module
APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 1000v t j = 25c 600 a i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 3 ma r ds(on) drain ? source on resistance v gs = 10v, i d = 107.5a 45 52 m v gs(th) gate threshold voltage v gs = v ds , i d = 30ma 3 5 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 42.7 c oss output capacitance 7.6 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 1.3 nf q g total gate charge 1602 q gs gate ? source charge 204 q gd gate ? drain charge v gs = 10v v bus = 500v i d = 215a 1038 nc t d(on) turn-on delay time 18 t r rise time 14 t d(off) turn-off delay time 140 t f fall time inductive switching @ 125c v gs = 15v v bus = 670v i d = 215a r g = 0.5 55 ns e on turn-on switching energy 7.2 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 670v i d = 215a, r g = 0.5 ? 4.3 mj e on turn-on switching energy 12 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 670v i d = 215a, r g = 0.5 ? 5.8 mj series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 600 i rm maximum reverse leakage current v r =1200v t j = 125c 2000 a i f dc forward current t j = 80c 360 a i f = 360a 2.5 3 i f = 720a 3 v f diode forward voltage i f = 360a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 3.3 q rr reverse recovery charge i f = 360a v r = 800v di/dt = 1200a/s t j = 125c 17.3 c
APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit transistor 0.025 r thjc junction to case thermal resistance series diode 0.16 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for teminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructi ons for sp6 power modules on www.microsemi.com
APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.005 0.01 0.015 0.02 0.025 0.03 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impeda nce, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 0 60 120 180 240 300 360 420 480 540 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15, 10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 120 240 360 480 600 720 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 120 240 360 480 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 107.5a 0 30 60 90 120 150 180 210 240 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 5 ? 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =107.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 350 700 1050 1400 1750 2100 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =215a t j =25c
APTM100UM45DAG APTM100UM45DAG ? rev 3 may, 2008 www.microsemi.com 6 ? 6 delay times vs current t d(on) t d(off) 0 30 60 90 120 150 80 120 160 200 240 280 320 360 400 i d , drain current (a) t d(on) and t d(off) (ns) v ds =670v r g =0.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 80 120 160 200 240 280 320 360 400 i d , drain current (a) t r and t f (ns) v ds =670v r g =0.5 ? t j =125c l=100h switching energy vs current e on e off 0 4 8 12 16 20 24 80 120 160 200 240 280 320 360 400 i d , drain current (a) switching energy (mj) v ds =670v r g =0.5 ? t j =125c l=100h e on e off e off 0 6 12 18 24 30 36 0123456 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =670v i d =215a t j =125c l=100h hard switching zcs 0 200 400 600 800 20 50 80 110 140 170 200 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =670v d=50% r g =0.5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s pate nts 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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